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Relocation of surface acoustic waves in AlxGa1-xN/GaN bilayer films on SiC substratesTAKAGAKI, Y; PLOOG, K. H.Semiconductor science and technology. 2005, Vol 20, Num 8, pp 856-859, issn 0268-1242, 4 p.Article

Tunneling-induced conductance oscillation in a point contact weakly coupled to an Aharonov-Bohm resonatorTAKAGAKI, Y; PLOOG, K. H.Solid state communications. 1999, Vol 113, Num 5, pp 291-293, issn 0038-1098Article

Surfactant-mediated molecular beam epitaxy of strained layer semiconductor heterostructuresTOURNIE, E; PLOOG, K. H.Thin solid films. 1993, Vol 231, Num 1-2, pp 43-60, issn 0040-6090Article

Conductance of Aharonov-Bohm interferometers embedded with an interacting dot : slave-boson mean-field calculationTAKAGAKI, Y; PLOOG, K. H.Physica status solidi. B. Basic research. 2005, Vol 242, Num 15, pp 3155-3162, issn 0370-1972, 8 p.Conference Paper

Imaging of the scarred wave functions in chaotic quantum cavitiesTAKAGAKI, Y; PLOOG, K. H.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 7, pp 073304.1-073304.4, issn 1098-0121Article

Enhanced In surface segregation during molecular-beam epitaxy of (In,Ga)As on (h11) GaAs for small values of hILG, M; PLOOG, K. H.Physical review. B, Condensed matter. 1993, Vol 48, Num 15, pp 11512-11515, issn 0163-1829Article

Surface stoichiometry, epitaxial morphology and strain relaxation during molecular beam epitaxy of highly strained InAs/Ga0.47In0.53As heterostructurseTOURNIE, E; PLOOG, K. H.Journal of crystal growth. 1994, Vol 135, Num 1-2, pp 97-112, issn 0022-0248Article

Direct synthesis of semiconductor quantum-wie and quantum-dot structuresNÖTZEL, R; PLOOG, K. H.Advanced materials (Weinheim). 1993, Vol 5, Num 1, pp 22-29, issn 0935-9648Article

Magnetization of two-dimensional square arrays of nanomagnetsTAKAGAKI, Y; PLOOG, K. H.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 18, pp 184439.1-184439.7, issn 1098-0121Article

Synthesis and characterization of InAs multiple quantum wells in a (111)B GaAs matrixILG, M; PLOOG, K. H.Applied physics letters. 1993, Vol 62, Num 9, pp 997-999, issn 0003-6951Article

Heavy carbon doping of AlAs by elemental-source molecular beam epitaxyFISCHER, A; PLOOG, K. H.Applied physics. A, Solids and surfaces. 1993, Vol 57, Num 3, pp 217-219, issn 0721-7250Article

Heteroepitaxy of large-misfit systems: Role of coincidence latticeTRAMPERT, A; PLOOG, K. H.Crystal research and technology (1979). 2000, Vol 35, Num 6-7, pp 793-806, issn 0232-1300Article

Nonuniversal magnetic-field correlation of conductance fluctuations in quantum cavities attached to a superconductorTAKAGAKI, Y; PLOOG, K. H.Journal of the Physical Society of Japan. 2000, Vol 69, Num 2, pp 552-558, issn 0031-9015Article

Influence of the lead on the transmission resonance in semiconductor-superconductor microjunctionsTAKAGAKI, Y; PLOOG, K. H.Solid state communications. 1998, Vol 108, Num 10, pp 733-736, issn 0038-1098Article

Virtual-surfactant epitaxy of strained InAs/Al0.48In0.52As quantum wellsTOURNIE, E; PLOOG, K. H.Applied physics letters. 1993, Vol 62, Num 8, pp 858-860, issn 0003-6951Article

InAs/Ga0.47In0.53As quantum wells : a new III-V materials system for light emission in the mid-infrared wavelength rangeTOURNIE, E; PLOOG, K. H; ALIBERT, C et al.Applied physics letters. 1992, Vol 61, Num 23, pp 2808-2810, issn 0003-6951Article

Controllable step bunching induced by Si deposition on the vicinal GaAs(001) surfaceWANG, Z. M; DÄWERITZ, L; PLOOG, K. H et al.Surface science. 2000, Vol 459, Num 3, pp L482-L486, issn 0039-6028Article

Virtual-surfactant mediated epitaxy of InAs on GaAs(001) studied by scanning tunneling microscopyBEHREND, J; WASSERMEIER, M; PLOOG, K. H et al.Journal of crystal growth. 1996, Vol 167, Num 3-4, pp 440-445, issn 0022-0248Article

Competing magnetic interactions in MnAs studied via thin film domain pattern analysisNEY, A; HESJEDAL, T; PLOOG, K. H et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 21, pp 212412.1-212412.4, issn 1098-0121Article

Influence of the growth mode on the microstructure of highly mismatched InAs/GaAs heterostructuresTRAMPERT, A; TOURNIE, E; PLOOG, K. H et al.Physica status solidi. A. Applied research. 1994, Vol 145, Num 2, pp 481-489, issn 0031-8965Article

Surface morphology dependence of plasmon inelastic scattering in RHEEDBRAUN, W; DAWERITZ, L; PLOOG, K. H et al.Surface science. 1998, Vol 399, Num 2-3, pp 234-238, issn 0039-6028Article

Different As desorption behaviour at step edges on InAs(001) and GaAs(001) surfacesBEHREND, J; WASSERMEIER, M; PLOOG, K. H et al.Surface science. 1997, Vol 372, Num 1-3, pp 307-311, issn 0039-6028Article

Defect control in highly mismatched III-V semiconductor heterostructures through virtual-surfactant-mediated molecular beam epitaxyPLOOG, K. H; TRAMPERT, A; TOURNIE, E et al.Physica status solidi. A. Applied research. 1994, Vol 146, Num 1, pp 353-370, issn 0031-8965Article

Low-density band-filling in strained InAs quantum wellsTOURNIE, E; BRANDT, O; PLOOG, K. H et al.Applied physics. A, Solids and surfaces. 1993, Vol 56, Num 2, pp 109-112, issn 0721-7250Article

Polarization properties of nonpolar GaN films and (In, Ga)N/GaN multiple quantum wells : Short pulse lasers for materials processing and diagnosticsGRAHN, H. T; PLOOG, K. H.Applied physics. A, Materials science & processing (Print). 2004, Vol 78, Num 4, pp 447-451, issn 0947-8396, 5 p.Article

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